NP15-00 technology provides 3 watts/mm saturated power density with high efficiency in a broad range of mmWave PA applications…
Tao Yuan, Taiwan – June 3, 2019:
WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15μm-gate technology, NP15-00, that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure. The NP15-00 technology supports full MMICs enabling WIN customers to design compact, linear or saturated high power amplifiers through 35GHz.
The NP15-00 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20 volts. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding. In the 29GHz band, NP15-00 offers saturated output power of 3 watts/mm with 13 dB linear gain and greater than 50% efficiency without harmonic tuning.
“The release of NP15 expands WIN’s portfolio of mmWave compound semiconductor technologies for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems. For mmWave active arrays, the higher transmit power and efficiency from NP15 affords designers greater flexibility to optimize antenna count, PA size and total array power. Depending on where deployed, mmWave RAN infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
NP15-00 sample kits are available and can be obtained by contacting WIN’s regional sales managers.
WIN Semiconductors Corp at IMS 2019, booth 772
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 772 at the 2019 IEEE MTT International Microwave Symposium in Boston, Massachusetts being held June 2-7, 2019
For more information, visit WIN Semiconductors Corp. at http://www.winfoundry.com/en_US/Index.aspx
About WIN Semiconductors Corp
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For nearly 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.