WIN's technology roadmap covers both HBT and HEMT processes. More than 20 processes are available and production-ready. WIN will continue to provide various cutting-edge processes to keep our customers ahead of the game.
In addition, in terms of the breadth of the technology, the primary compound semiconductor materials have expanded from GaAs to GaN in order to satisfy the diverse wireless communication needs. In terms of market application, we have actively focused on the R&D for 5G infrastructure and optical communications technologies under the Internet of Things (IoT) trend in order to capture future market opportunities.
4th Generation HBT for GSM/3G/4G/Wi-Fi
5th Generation HBT for GSM/3G/4G/Wi-Fi /Sub-6GHz/HPUE
7th Generation HBT for GSM/3G/4G/Wi-Fi /Sub-7GHz/HPUE
0.5μm E/D pHEMT
0.25/0.5μm E/D pHEMT
0.5 μm 8V Operation pHEMT
0.25μm 6V Operation pHEMT
0.15μm 6V Operation pHEMT
0.1μm 4V Operation pHEMT
0.15μm E-mode 4V Operation pHEMT
0.15μm 4V Operation pHEMT
0.18μm 8V Operation pHEMT
0.18μm 4V Operation pHEMT
0.1μm 4V Power GaAs pHEMT with Integrated Vertical PIN and Schottky Barrier Diodes MMIC Technology
Optical gate, 4V Power GaAs pHEMT with Integrated Vertical PIN and Schottky Barrier Diodes MMIC Technology
High efficiency HBT4 + Lower Ron pHEMT
High Linearity HBT4 + Lower Ron pHEMT
0.15μm 28V Operation GaN HEMT
0.25μm 28V Operation GaN HEMT
0.45μm 50V Operation GaN HEMT
8V Operation IPD
28V Operation IPD
50V Operation IPD
3μm i-layer Diode
WIN provides various optional processes to fullfill various unique application requirements and package technology. That approach enables highly integrated product design and superior performance with advanced packaging.
This interconnection structure can be used for flip-chip attachment of GaAs die to a variety of substrate material.
Remark: pHEMT with EMR(Enhanced moisture ruggedness) process is required.
The optional metal layer for compact interconnection designs and high Q-factor inductors.
The optional PN diodes for ESD protection.
0.5umE/D pHEMT devices
0.5um E/D mode for logics circuit design.
1. BS via could be designed as GND or for transmitting the RF signals.
2. Simple BS metal pattern for easy Installation with die attachment process.
3. Eliminate wire bonding for great RF performance.