The flexible PIN3-00 process targets high frequency switch and limiter applications where GaAs PIN diodes provide performance advantages…
TAOYUAN, Taiwan – June 6, 2017:WIN Semiconductors Corp. (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has developed an advanced GaAs PIN diode MMIC process for high frequency switch and monolithic power limiter applications. Fabricat?ed on 150mm semi-insulating GaAs wafers, the 3μm i-layer PIN diodes offer several performance advantages including near constant junction capacitance through 50 GHz, low insertion loss, and excellent isolation required for high frequency applications.
The PIN3-00 GaAs PIN diode MMIC process uses a humidity robust architecture with low-k dielectric crossovers, and three interconnect metal layers with up to 7μm thick Au metallization for high Q-factor passive elements. Standard through-wafer via senable flexible ground connections and optional RF hot via supports placement of RF ports on the backside of the MMIC.
“This advanced PIN diode MMIC fabrication process offers significant design flexibility for multiple applications and end-markets. The PIN3-00 process can be used for receive path limiters in Radar Tx/Rx modules, power switching as well as high frequency 5G switch functions. WIN is the first compound semiconductor foundry to offer this high performance technology on 150mm wafers, and at the scale required for high volume markets” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
WIN Semiconductors Corp at 2017 International Microwave Symposium
WIN Semiconductors Corp. will be showcasing its RF and mm-Wave solutions in booth 1858 at the 2017 IEEE International Microwave Symposium in Honolulu, Hawaii being held June 4-9.
For more information, visit WIN Semiconductors Corp. at
About WIN Semiconductors Corp.
WIN Semiconductors is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp.are found in a vast array of markets, including smart phone, mobile infrastructure, optical communications, CATV, aerospace, defense and automotive applications.
For more than 17 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2200 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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