2010/05/25

HEMT Switch Large-Signal Device Model Release Announcement

WIN Semiconductors Corp. (WIN) releases a large-signal device model (WIN Switch Model) for its newest HEMT (High Electron Mobility Transistor) switch technology, PS50-06.  This model accurately predicts the low-level distortion products that plays a critical role in overall system performance.  Accurate prediction of GSM harmonics below -70dBc has been achieved through the release of new model. 

 

The technology underlying this development work was first reported at 2009 Compound Semiconductor IC symposium (CSICS 2009) held at Greensboro, U.S.A., in October.  Although the released PS50-06 model is based on the model presented at CSICS 2009, it is modified to include multiple gate devices (up to quadruple gate) while keeping both high accuracy and good simulation convergence.  With this model, customers using WIN’s PS50-06 process can design large-scale multi-throw switches consisting of various multiple gate devices.

To obtain the model, please contact one of our sales representatives click here.

WIN is also planning to release models for other switch technologies as well.

 

WIN Semiconductors, Corp.
No. 69, Technology 7th Rd.
Hwaya Technology Park
Kuei Shan Hsiang,
Tao Yuan Shien, Taiwan 333