The NP25 technology provides 28-volt operation with superior power density andefficiency fordemandingpower applications through 12 GHz…
Tao Yuan, Taiwan – October 9, 2017:WIN Semiconductors Corp(TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has released an optimized version of its 0.25μm gallium nitride on silicon carbide technology, NP25, that provides superior DC and RF transistor performance. NP25 is a 0.25μm-gate GaN-on-SiC process, and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2015, the optimized 0.25μm process offers enhanced RF performance with fast switching time, higher gain and increased power added efficiency for demanding applications through 12GHz.
Optimized NP25 transistors exhibit more ideal DC and RF IV characteristics and provide 2 dB higher stable gain through X-band. Increased gain leads directly to higher power density and PAE under a range of tuning and bias conditions. This performance-optimized process is fully qualified and supported with a comprehensive design kit and transistor models.
The WIN NP25 technology is fabricated on 4-inch silicon carbide substrates and operates at a drain bias of 28 volts. At 10GHz, NP25 provides saturated output power of 5 watts/mm with 19 dB linear gain and over 65% power added efficiency. These performance metrics make the NP25process well suited for a variety of high power, broad bandwidth and linear transmitfunctions in the radar, satellite communications, and wireless infrastructure markets.
NP25 sample kits are available and can be obtained by contacting WIN’s regional sales managers.
WIN Semiconductors Corp. at European Microwave 2017
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in stand 111Bat the 2017 European Microwave Week in Nurnberg, Germany being held October 8-13, 2017
For more information, visit WIN Semiconductors Corp. at
About WIN Semiconductors Corp
WIN Semiconductors is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, optical communications, CATV, aerospace, defense and automotive applications.
For more than 17 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2200 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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