WIN Semiconductors PP25-1x family of optical gate GaAs pHEMT processes provide Ft of 70GHz, 14V breakdown voltage and P1dB of 600mW/mm at 29 GHz with 6 volt operation.  These technologies are intended for low cost high volume millimeter wave applications such as point to point radio and broadband amplification.  All versions have airbridge crossovers (with or without BCB protection) and are available in 50µm and 100µm thicknesses.  All technologies in the family are fabricated at WIN’s 6” GaAs fabrication facility in Tao Yuan Shien, Taiwan.

WIN Semiconductors, Corp.

Tao Yuan Shien, Taiwan +886-3-397-5999, www.winfoundry.com