PP10-20 provides additional gain and higher bandwidth for power, low-noise, and linear amplifiers through D-Band
Taoyuan, Taiwan – June 20, 2022:
WIN Semiconductors Corp. (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, announces the release of its latest generation 0.1µm pHEMT technology, PP10-20. Building on the mature and production proven PP10 platform, this second-generation technology provides a substantial increase in transistor gain and improves ƒt/ƒmax to 160GHz and 240 GHz respectively. These improvements have been achieved while maintaining reliable 4V operation necessary for backhaul power amplifiers and high linearity receivers operating from W-band though D-band.
Targeting applications above 100GHz, this multifunction GaAs pHEMT technology can be used for low noise and power amplifiers as well as wide bandwidth modulator drivers for high data rate fiber optics. PP10-20 has two interconnect metal layers with air-bridge crossovers and includes monolithic PN-junction diodes for compact on-chip ESD protection circuits. This technology is manufactured on 150mm GaAs substrates with a final wafer thickness of 50µm. A backside ground plane with through-wafer-vias (TWV) are standard for PP10-20 and TWVs can be configured as through-chip RF transitions to eliminate the adverse impact of bond wires at millimeter wave frequencies.
“PP10-20 builds upon the mature PP10-10 platform used in many of today’s E-band power amplifiers deployed in wireless backhaul. WIN’s deep understanding of III-V junction engineering yielded a substantial improvement in transistor performance without the need to reduce gate length. This approach reduces overall technology risk and achieves increased transistor performance while maintaining the high production yields our customers expect,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
Contact a WIN Semiconductors regional sales manager for information about sample kits.
WIN Semiconductors Corp. at IEEE International Microwave Symposium 2022, booth 6080
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 6080 at the 2022 IEEE International Microwave Symposium (IMS) being held at the Colorado Convention Center in Denver, Colorado June 21st through June 23rd, 2022
For more information, visit WIN Semiconductors Corp. at http://www.winfoundry.com/en_US/Index.aspx
About WIN Semiconductors Corp.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure, and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, Gallium Nitride High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 170 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense, and automotive applications.
For over 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value-added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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