PIH1-10 platform provides monolithic PIN Tx/Rx switches with power and low noise pHEMT technology to realize single chip front ends operating in the 24GHz to 45GHz bands…
TAOYUAN, Taiwan – May 30, 2019:
WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, announces the commercial release of its high integration mmWave GaAs platform, PIH1-10. Optimized for 5G front-ends the PIH1-10 technology combines an advanced 100GHz ?t enhancement-mode pHEMT with monolithic PIN and Schottky diodes, to provide best in class mmWave performance for all front-end functions. WIN is the first compound semiconductor wafer foundry to commercialize an integrated GaAs platform capable of producing single chip front-ends for 5G handsets and mmWave radio access networks.
The core of PIH1-10 is an E-Mode pHEMT that provides the gain, power density and efficiency for mmWave transmit power amplifiers, and the noise performance needed in the receive LNA. This versatile single supply transistor can support Tx power levels of 30dBm and Rx noise figure of 2.5dB at mmWave frequencies. Furthermore, the integrated PIN diode provides excellent mmWave Tx/Rx switch functionality with <1dB insertion loss, enabling monolithic integration of all front-end functions on a single chip. GaAs technology outperforms BiCMOS in every front-end function, and mmWave single-chip front ends realized PIH1-10 can reduce array power consumption, simplify thermal management, and extend battery life in 5G user equipment while improving total cost of ownership for mmWave access points.
“The commercial release of PIH-10 provides a new set of integrated GaAs solutions to improve mmWave front end performance. High efficiency Ka-band GaAs power amplifiers, LNAs and low loss switches on a compact single chip front-end will enhance the user experience through improved battery life and better 5G mmWave coverage,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp. “Integrated GaAs front-ends can also be used in mmWave access points, and the higher Tx power and efficiency of PIH1-10 enables smaller active antenna arrays with lower total power consumption than existing RAN hardware. Network owners expect the wireless supply chain to reduce equipment total cost of ownership and provide flexible mmWave active antenna solutions to support multiple deployment scenarios. Higher performance integrated GaAs front-ends provide an optimum path to satisfy these diverse requirements”
WIN Semiconductors Corp at IMS 2019
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 772 at the 2019 IEEE MTT International Microwave Symposium in Boston, Massachusetts being held June 2-7, 2019
For more information, visit WIN Semiconductors Corp. at http://www.winfoundry.com/en_US/Index.aspx
About WIN Semiconductors Corp.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For nearly 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.