WIN Semiconductors Releases New Platform That Integrates High Performance 0.1µm GaAs pHEMT With Monolithic PIN and Vertical Schottky Diodes
PIH0-03 offers increased integration, combining high performance diode options with WIN’s mature 0.1µm pHEMT platform enabling power and low noise applications with on-chip limiters, detectors, mixers, PIN switch and ESD protection
TAOYUAN, Taiwan – June 11, 2018:WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, continues to expand its portfolio of highly integrated GaAs technologies and has released a new pHEMT technology which incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1µm pseudomorphic HEMT process, PP10. This integrated platform, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600GHz, as well as multi-function PIN diodes while preserving the state-of-the-art mmWave performance of the PP10 technology. The availability of monolithic PIN and Schottky diodes with a high performance mmWave transistor enables on-chip integration of a wide range of functions, including mixers, temperature/power detecting, limiters, and high frequency switching, and supports power, low noise and optical applications through100 GHz.
This integrated technology provides users with multiple pathways to add on-chip functionality and reduce the overall die count of complex multi-chip modules used in a variety of end-markets. In addition to high frequency switching, the monolithic PIN diodes can be used for low parasitic capacitance ESD protection circuits, and as an on-chip power limiter to protect sensitive LNAs in phased array radars. The vertical Schottky diodes enable numerous detecting and mixing functions and can be combined with the PIN diodes in unique limiter applications.
“Today’s complex systems and highly competitive markets require increased mmWave performance and more functionality per chip. The PIH0-03 platform is the latest example of how WIN Semiconductors is addressing these critical market needs by offering high performance GaAs technologies with new levels of multifunction integration. To meet the ever-increasing demands of next generation mobile user equipment, wireless infrastructure, fiber optics and advanced military systems markets, WIN Semiconductors continues to commercialize advanced, highly integrated GaAs solutions and provide our customers a clear technology advantage,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
WIN Semiconductors Corp at IMS 2018
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 415 at the 2018 International Microwave Symposium in Philadelphia, PA being held on June 10-15, 2018
For more information, visit WIN Semiconductors Corp. at www.winfoundry.com
About WIN Semiconductors Corp
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50MHz to 130GHz and through lightwave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, optical communications, CATV, aerospace, defense and automotive applications.
For more than 18 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2500 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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