The NP45-11 technology provides 50-volt operation with superior power density and efficiency for demanding 5G infrastructure such as MIMO antenna systems…
Tao Yuan, Taiwan – June 7, 2018: WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has expanded its gallium nitride (GaN) process capabilities to include a 0.45μm-gate technology that supports current and future 5G applications. The NP45-11 GaN-on-SiC process allows customers to design hybrid Doherty power amplifiers used in 5G applications including massive MIMO (multiple-input and multiple-output) wireless antenna systems. Similar to macro-cell applications, MIMO base stations often combine Doherty power amplifiers with linearization techniques to meet demanding linearity and efficiency specifications of today’s wireless infrastructure.
GaN devices outperform the incumbent LDMOS technology, offering superior efficiency, instantaneous bandwidth and linearity, particularly in the higher frequency bands utilized in 5G radio access networks.
Ideal for use in sub-6 GHz 5G applications including macro-cell transmitters and MIMO access points, the NP45-11 technology supports power applications from 100 MHz through 6GHz. This discrete transistor process is environmentally rugged, incorporating advanced moisture protection and meets the JEDEC JESD22-A110 biased HAST qualification at 55 volts. Combined with WIN Semiconductors’ environmentally rugged high voltage passive technology, IP3M-01, the NP45-11 technology enables hybrid power amplifiers in a low cost plastic package.
The NP45-11 technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50 volts. In the 2.7GHz band, this technology provides saturated output power of 7 watts/mm with 18 dB linear gain and more than 65% power added efficiency without harmonic tuning.
“5G radio access networks create several challenges to power amplifier designs used in MIMO systems. High output power and linear efficiency are primary design objectives to meet performance specifications and lower total cost of ownership. The tradeoff between output power and linearized efficiency is significant because of the high peak-to-average power ratio employed in today’s wireless modulation schemes. This tradeoff becomes more difficult in 5G applications due to greater instantaneous bandwidth requirements and higher operating frequency,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
NP45-11 sample kits are available and can be obtained by contacting WIN’s regional sales managers.
WIN Semiconductors Corp at IMS 2018, booth 415
David Danzilio will be presenting a paper at the IEEE International Microwave Symposium 5G Power Amplifier Technology Workshop on Monday, June 11th 2018.
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in stand 415 at the 2018 IMS in Philadelphia, PA being held June 10-15, 2018
For more information, visit WIN Semiconductors Corp. at www.winfoundry.com
About WIN Semiconductors Corp
WIN Semiconductors is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50MHz to 130GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, optical communications, CATV, aerospace, defense and automotive applications.
For more than 18 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2500 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.