WIN Semiconductors Enables Single Chip GaAs Solutions For 5G RF Front End Modules
PIH1-10 platform provides monolithic PIN Tx/Rx switches with power and low noise pHEMT technology to realize single chip front ends operating in the 28GHz to 40GHz bands…
TAOYUAN, Taiwan – October 2, 2017:WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, is enabling fully integrated single chip solutions for 5G front end modules with its PIH1-10 advanced GaAs platform. The PIH1-10 process integrates monolithic PIN diodes, capable of power switching through 50GHz, into an advanced 100GHz ft pseudomorphic HEMT platform. This technology provides superior transmit power performance and lower receiver noise figure, which are requirements for 5G systems.
This versatile technology provides users with multiple pathways to add on-chip functionality and higher integration. In addition to monolithic PIN diodes and high performance pHEMT devices, the PIH1-10 platform offers linear Schottky diodes for mixers or detectors, as well as enhancement and depletion transistors optimized for logic functionality and bias controls. When combined with RF isolated through-wafer-vias, this humidity resistant technology enables a wafer level package option for compact chip integration in MIMO functions where available board space is limited.
“The PIH-10 technology leverages WIN’s qualified production techniques and industry leading manufacturing scale to provide a new platform that can be extended and optimized to address rapidly evolving market requirements,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp. “Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity and power added efficiency provided by GaAs devices as compared to RF CMOS or SiGe. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G where gain and efficiency at 6-10dB back-off will determine system-level performance. WIN’s GaAs pseudomorphic HEMT is the foundation for many of todays high performance amplifiers operating in the 20GHz to 100GHz range, and incorporating low loss PIN switch functionality enables our customers to field unique single chip 5G solutions without sacrificing performance.”
WIN Semiconductors Corp at European Microwave 2017
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in stand 111B at the 2017 European Microwave Week in Nurnberg, Germany being held October 8-13, 2017
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About WIN Semiconductors Corp.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, optical communications, CATV, aerospace, defense and automotive applications.
For more than 17 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2200 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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