The NP12-01 platform provides increased gain and efficiency for high transmit power applications through Ka-band…
Taoyuan, Taiwan – June 21, 2022:
WIN Semiconductors Corp. (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has expanded its portfolio of RF GaN technologies with the release of a new gallium nitride (GaN) on silicon carbide (SiC) 0.12μm-gate technology. The NP12-01 mmWave compound semiconductor technology provides increased gain and improved transistor stability factor. The NP12-01 technology is ideal for the high-power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.
Supporting full MMICs, the NP12-01 platform allows customers to develop compact linear or saturated power amplifiers up to 50GHz. This process is qualified for 28V operation, and in the 29GHz band, generates saturated output power over 4 watts/mm with 13.5 dB linear gain and nearly 50% efficiency. When optimized for power added efficiency, NP12-01 provides over 3.5 watts/mm output power and greater than 50% PAE at 29GHz.
Higher gain and power added efficiency provided by the NP12-01 platform affords designers a larger trade-space to optimize amplifier performance and chip size to meet increasingly difficult specifications of current generation communication platforms and radar systems. Depending on the function, these high-performance applications require precise optimization of output power, linearity, gain and efficiency, and a broad trade-space is crucial to balance amplifier performance and product cost.
Contact a WIN Semiconductors regional sales manager for information about sample kits.
WIN Semiconductors Corp. at IEEE International Microwave Symposium 2022, booth 6080
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 6080 at the 2022 European Microwave Week being held at the Colorado Convention Center in Denver, Colorado June 21st through June 23rd, 2022
For more information, visit WIN Semiconductors Corp. at http://www.winfoundry.com/en_US/Index.aspx
About WIN Semiconductors Corp.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, Gallium Nitride High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 170 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For over 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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