WIN is the first compound semiconductor wafer foundry to commercialize an integrated GaAs platform for producing single chip front-ends for 5G handsets and mmWave radio access networks…
TAOYUAN, Taiwan – September 26, 2019: WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has combined an advanced 100GHz ?t enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best-in-class mmWave performance for all front-end functions. The PIH1-10 platform is designed for single chip 5G front ends operating in the 24GHz to 45GHz bands.
The innovative PIH-10 technology provides a new set of integrated GaAs solutions that improve mmWave front end performance. High efficiency Ka-band GaAs power amplifiers, LNAs and low loss switches on a compact single chip front-end will enhance the user experience through improved battery life and better 5G mmWave coverage.
Integrated GaAs front-ends can also be used in mmWave access points, and the higher Tx power and efficiency of PIH1-10 enables smaller active antenna arrays with lower total power consumption than existing RAN hardware.
The core of PIH1-10 is an E-Mode pHEMT that provides the gain, power density and efficiency for mmWave transmit power amplifiers, and the noise performance needed in the receive LNA. This versatile single supply transistor can support Tx power levels of 30dBm and Rx noise figure of 2.5dB at mmWave frequencies. Furthermore, the integrated PIN diode provides excellent mmWave Tx/Rx switch functionality with <1dB insertion loss, enabling monolithic integration of all front-end functions on a single chip.
“GaAs technology outperforms BiCMOS in every front-end function, and mmWave single-chip front ends realized in PIH1-10 can reduce array power consumption, simplify thermal management, and extend battery life in 5G user equipment while reducing total cost of ownership for mmWave network access points,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp. “IN addition, the higher performance integrated GaAs front-ends provide flexible mmWave active antenna solutions to support multiple deployment scenarios.”
WIN Semiconductors Corp at European Microwave Week 2019, booth 1220
WIN Semiconductors Corp. will be celebrating its 20th anniversary and showcasing its compound semiconductor RF and mm-Wave solutions in booth 1220 at the 2019 European Microwave Week being held in Paris, France September 29th through October 4th, 2019
For more information, visit WIN Semiconductors Corp. at https://www.winfoundry.com/
About WIN Semiconductors Corp.
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.