NP45 technology provides 50-volt operation with superior power density and efficiency for demanding macro-cell base station transmit applications through 6 GHz.
Tao Yuan, Taiwan – November 2, 2015: WIN Semiconductors Corp. (TPEx:3105),
the world’s largest pure-play compound semiconductor foundry, today announced the
expansion of its GaN technology portfolio with addition of the NP45 gallium nitride
on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users
to design fully integrated amplifier products as well as custom discrete transistors,
and has been optimized for use in 4G macro-cell base station power amplifiers operating
at 2.7GHz and above where bandwidth and linearity performance are key differentiators.
The macro-cell base power amplifier market is projected to grow to more than $1B
annually by 2020 and GaN technology is expected to become the technology of choice
for this application. Owing to its superior efficiency, bandwidth and linearity,
GaN devices outperform the incumbent LDMOS technology, particularly in the higher
frequency bands utilized in 4G/4.5G networks.
The WIN NP45 technology is fabricated on 100mm silicon carbide substrates and operates
at a drain bias of 50 volts.In the 2.7GHz band this technology provides saturated
output power of 7 watts/mm with 17 dB linear gain and over 75% power added efficiency.
These performance metrics make NP45 suitable for use in high bandwidth 4G-5G high
power macro-cell transmitters and small cells. NP45 sample kits are available and
can be obtained by contacting WIN’s regional sales managers.
WIN Semiconductors Corp. at 2015 COMCAS
WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave
solutions in booth 53-57 at the 2015 IEEE COMCAS Conference in Tel Aviv, Israel
being held November2nd-4th.
About WIN Semiconductors Corp.
WIN Semiconductors is the leading global provider of pure-play GaAs and GaN wafer
foundry services for the wireless, infrastructure and networking markets. WIN Semiconductors
provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar
Transistor and Pseudomorphic High Electron Mobility Transistor technology solutions
that support leading edge products for applications from 50 MHz to 100 GHz. Custom
products built by WIN Semiconductors are found in in a vast array of markets, including
smartphone, mobile infrastructure, optical communications, CATV and automotive applications.
For more than 15 years, WIN Semiconductors has provided foundry services from its
state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Tao
Yuan City, Taiwan. This multi-site manufacturing facility has more than 1700 employees
and provides WIN Semiconductors’ customers with a diverse array of device technology
platforms and value added services, including DC/RF product testing, Cu wafer bumping
and turn-key package solutions for accelerated product development.
WIN Semiconductors Corp.