WIN Semiconductors Expands Its Gallium Nitride Technology Portfolio With the Addition of NP45 GaN-on-SiC Power Process

NP45 technology provides 50-volt operation with superior power density and efficiency for demanding macro-cell base station transmit applications through 6 GHz.

Tao Yuan, Taiwan – November 2, 2015: WIN Semiconductors Corp. (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, today announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7GHz and above where bandwidth and linearity performance are key differentiators. The macro-cell base power amplifier market is projected to grow to more than $1B annually by 2020 and GaN technology is expected to become the technology of choice for this application. Owing to its superior efficiency, bandwidth and linearity, GaN devices outperform the incumbent LDMOS technology, particularly in the higher frequency bands utilized in 4G/4.5G networks.

The WIN NP45 technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50 volts.In the 2.7GHz band this technology provides saturated output power of 7 watts/mm with 17 dB linear gain and over 75% power added efficiency. These performance metrics make NP45 suitable for use in high bandwidth 4G-5G high power macro-cell transmitters and small cells. NP45 sample kits are available and can be obtained by contacting WIN’s regional sales managers.

WIN Semiconductors Corp. at 2015 COMCAS

WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 53-57 at the 2015 IEEE COMCAS Conference in Tel Aviv, Israel being held November2nd-4th.

About WIN Semiconductors Corp.
WIN Semiconductors is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN Semiconductors provides its foundry partners with a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor technology solutions that support leading edge products for applications from 50 MHz to 100 GHz. Custom products built by WIN Semiconductors are found in in a vast array of markets, including smartphone, mobile infrastructure, optical communications, CATV and automotive applications.

For more than 15 years, WIN Semiconductors has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Tao Yuan City, Taiwan. This multi-site manufacturing facility has more than 1700 employees and provides WIN Semiconductors’ customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and turn-key package solutions for accelerated product development.

Joe Tsen
WIN Semiconductors Corp.