HBT (Heterojunction Bipolar Transistor) technology is the most popular technology for the Power Module, the most critical component, used in the rapidly growing Cellular and PCS handset market.
pHEMT (Pseudomorphic High Electron Mobility Transistor) is most popular for the higher frequency, higher performance wireless communications and for the low voltage handset market.
GaAs' (Gallium Arsenide) intrinsic RF (radio frequency) characteristics make it suitable for the wireless communications applications. Its superior performance is unmatched by either the emerging SiGe (Silicon Germanium) or Silicon RF CMOS. WIN Semiconductors successfully demonstrated the 2um InGaP (Indium Gallium Phosphide) HBT last month. We are developing the 1um HBT technology and will introduce to the market in 2001. HBT technology has been widely accepted in the cellular handset, optical communications and certain lower frequency wireless products, such as two-way pager, WLAN (Wireless Local Area Network), etc.
pHEMT technology will be the key technology for the major components used in the broadband and high performance communications products, such as in the microwave frequency 1.8-2.0 GHz, 2.1-2.2 GHz, 2.5-5.8 GHz, mid-to-high frequency 28-31 GHz, and high frequency 76-77 GHz. These applications include PCS, 3G wireless (third generation cellular handset), the emerging MMDS (Multi-channel Multi-point Distribution Service) and LMDS (Local Multi-point Distribution Service), SATCOM (Satellite Communication), Smart Cruise Control in the Automobile industry, Point-to-Point Radio Link, Optical Communications, Fixed Wireless Communication, and Super Low Interference CATV (Cable TV). WIN Semiconductors Corporation demonstrated successfully Asia's first 6" 0.5um pHEMT wafer. We expect to produce the first 0.35um pHEMT MMIC wafer in the next month and the 0.15um pHEMT wafer within the next three months. We have recruited the best technical team in our company and this is one of our critical competitive advantages.