| Paper# |
Title |
 |
| WIN-P01-002 |
Manufacturable 0.15 um PHEMT Process for High Volume and Low Cost on 6” GaAs Substrates : The First 0.15 mm PHEMT 6”GaAs Foundry Fab |
|
| WIN-P02-002 |
Process porting provides a path to production scaling |
|
| WIN-P02-003 |
A WINning GaAs Manufacturing Solution |
|
| WIN-P02-010 |
The First 0.15um MHEMT 6”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations |
|
| WIN-P04-002 |
High Yield Enhancement and Depletion-Mode pHEMT Using 6 inch GaAs Production Process |
|
| WIN-P04-003 |
Advanced Compound Semiconductor Technologies for Commercial Wireless Applications |
|
| WIN-P05-004 |
6-INCH InGaP HBT TECHNOLOGY OPTIMISATION FOR HIGH PERFORMANCE POWER AMPLIFIERS |
|
| WIN-P05-005 |
InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers |
|
| WIN-P05-007 |
An investigation and comparison of 45-degree spread thermal model and other techniques to extract junction temperature of HBT and pHEMT for reliability life test |
|
| WIN-P06-001 |
A dual-gate E/D-mode GaAs pHEMT to enhance microwave power handling capability |
|
| WIN-P06-002 |
Manufacturing of GaAs ICs for Wireless Communications Applications |
|
| WIN-P06-003 |
Reliability assessment of extrinsic defects in SiNx Metal-Insulator-Metal capacitors |
|
| WIN-P07-001 |
Yield Enhancement of 0.15um pHEMT Milli-meter Wave Power Amplifiers using an Effective Statistical Analytical Approach |
|
| WIN-P07-002 |
Reliability Study of 0.15um MHEMT with Vds>3V Bias for Amplifier Application |
|
| WIN-P08-001 |
Quarter-Micron Optical Gate 6” Power pHEMT Technology |
|
| WIN-P09-001 |
0.15 Micron Gate 6-in pHEMT Technology by Using I-Line Stepper |
|
| WIN-P09-003 |
Accurate HEMT Switch Large-Signal Device Model Derived from Pulsed-Bias Capacitance and Current Characteristics |
|
| WIN-P10-001 |
Improvement in Yield and Assurance in Power Performance for Quarter- Micron Optical Gate 8V Power pHEMT Technology |
|
| WIN-P10-Z01 |
pHEMT Switch Yield Improvement Through Feedback From 100% Die Test |
|
| WIN-P10-Z02 |
Advanced Full Periphery pHEMT Switch with Optimum Figure of Merit RonCoff |
|
Technology
