WIN provides foundry services in High Electron Mobility Transistor (HEMT) technology utilizing InGaAs layer as channel material. Advanced 6-inch process and epitaxy design provides excellent low noise and power performance with good temperature stability/reliability. WIN provides various groups of process technologies with very high yield for production now.

WIN's InGaAs HEMT Process Technologies

	0.15μm LN (PL15-10)	0.15μm PWR (PP15-10:2 mil PP15-20:4 mil)	0.5μm switch (PS50-00)	0.5μm PWR (PP50-10)	0.5μm ED Mode PD50-01 Dmode Emode
Targeted Applications	10 and 40Gb/s lightwave circuits	VSAT﹐satellite﹐ automotive radar	Cellular﹐PCS﹐ 802.11×	base station driver	Cellular﹐ PCS﹐ 802.11
fI (GHz)	95	85	32	32	32	35
GM_Peak (mS/mm)	550	495	320	310	330	500
Idmax (mA/mm)	500	650	400	480	375	320
IDSS (mA/mm)	260	500	270	350	235	1.E-04
VDG(V)	9	10	15	20	16	15
Vto(V)	-0.7	-1.2	-1.1	-1.4	-1	0.25
TFR (ohm/sq)	50	50	50	50	50
Capacitor (pf/mm2)	400	400	300	400	600(MIM) 900(Stack Cap)
Interconnect Crossover	Airbridge	Airbridge	SiN	Airbridge	Polyimide

0.15 m Low Noise pHEMT(PL15-10)

WINs 0.15m low noise pHEMT technology is ideal for 10 and 40 Gb/s broadband communications and very low noise, high gain LNA. The key factors of this technology includes:

95 GHz ft process 0.15 um e-beam lithography defined T-gate Selective gate recess for uniformity Air-bridge or slot via for connections Two based Au interconnect metal layers) Final wafer thickness 4mil Production ready

Noise Figure2-26GHz

40Gb/s TIA eye diagram

0.15 m Power pHEMT(PP15-10, -20)

WIN has developed 2 versions of 0.15 m power pHEMT process (2 mil/4 mil) for high volume production. The technologies are ideal for applications such as LMDS, VSAT, base station and automotive radar.

High Yield	RF Life test

29 GHz Loadpull

0.5 m pHEMT Switch(PS50-00)

WINs 0.5 m pHEMT switch process provides low insertion loss, high isolation and low harmonic distortion. The technology is well suited for both cellular handsets and WLAN applications.

High Yield	TX Input pover sweep at 900MHz and control voltage=-2.7/0 v

DC VCONT_TX sweep at 900MHz and 35dbm input power	Small singal frequency sweep at control voltage=-2.7/0 V

0.5 m Power pHEMT(PP50-10)

WIN has developed 0.5 m power pHEMT process for high volume production. The technologies are ideal for applications such as VSAT, base station and CATV.

2 GHz Loadpull	10 GHz Loadpull