WIN provides foundry services in Heterojunction Bipolar Transistor (HBT) technology utilizing InGaP as the emitter material. InGaP HBT provides excellent power performance, linearity and temperature stability/reliability. WIN provides various kinds of process technologies with very high yield for production now.

WIN's InGaP HBT Process Technologies

	1μm HBT) (H01U-00)	2μm HBT (15V) (H02U-00)	1μm HBT (H02U-01)	2μm HBT (High Linearity) (H02U-32)	2μm HBT (High Ruggedness) (H02U-43)
Targeted Applications	OC192 PMD and PHY Layer circuits	Cellular,PCS, 802.11xPA	802.11xPA	CDMA PA with higher Linearity	GSM PA With stringent ruggedness Requirement
fT (GHz)	65	35	35	31	31
fmax(GHz)	80	100	120	110	110
IDC current gain	140	75	75	70	75
BVCEO (V)	9	15	14.5	16.5	17
BVEBO (V)	9	9	10	9.5	7
BVCBO (V)	18	22	23	27	30
TFR(ohm/sq)	50	50	50	50	50
Capacitor(pf/mm2)	600(MIM)	300(MIM) 450(Stack Cap)	600(MIM) 900(Stack Cap)	600(MIM) 900(Stack Cap)	600(MIM) 900(Stack Cap)
Interconnect Crossover	Polyimide	SiN	Polyimide	Polyimide	Polyimide

1 m HBT (H01U-00)

WIN’s 1 μm HBT technology utilizes 1mm emitter finger as unit cell. The technology is ideal for broadband lightwave communication systems (SONET/SDH). The key factors of this technology includes:

• 65 GHz ft process
• High integration level
• For PA, 10 Gb/s lightwave communications
  -- Higher frequency PAs
  -- TIA, LA/AGC
• Production ready

F v.s J Characteristics

2 m HBT (H02U-00, -10, -20)

WIN has developed 3 versions of 2 m HBT process for high volume production. The technologies are ideal for applications such as digital cellular handsets (GSM, CDMA, TDMA, and 3G W-CDMA systems) and WLAN.

HBT X' sectional View	DC Life test (H02U-00)

GSM1900 Loadpull (H02U-00)

GSM1900 Loadpull (H02U-20)	GSM1900 Ruggedness (H02U-20)