|WIN Semiconductors Enables Single Chip GaAs Solutions For 5G RF Front End Modules|
PIH1-10 platform provides monolithic PIN Tx/Rx switches with power and low noise pHEMT technology to realize single chip front ends operating in the 28GHz to 40GHz bands…
TAOYUAN, Taiwan – October 2, 2017:WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, is enabling fully integrated single chip solutions for 5G front end modules with its PIH1-10 advanced GaAs platform. The PIH1-10 process integrates monolithic PIN diodes, capable of power switching through 50GHz, into an advanced 100GHz ft pseudomorphic HEMT platform. This technology provides superior transmit power performance and lower receiver noise figure, which are requirements for 5G systems.
This versatile technology provides users with multiple pathways to add on-chip functionality and higher integration. In addition to monolithic PIN diodes and high performance pHEMT devices, the PIH1-10 platform offers linear Schottky diodes for mixers or detectors, as well as enhancement and depletion transistors optimized for logic functionality and bias controls. When combined with RF isolated through-wafer-vias, this humidity resistant technology enables a wafer level package option for compact chip integration in MIMO functions where available board space is limited.
“The PIH-10 technology leverages WIN’s qualified production techniques and industry leading manufacturing scale to provide a new platform that can be extended and optimized to address rapidly evolving market requirements,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp. “Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity and power added efficiency provided by GaAs devices as compared to RF CMOS or SiGe. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G where gain and efficiency at 6-10dB back-off will determine system-level performance. WIN’s GaAs pseudomorphic HEMT is the foundation for many of todays high performance amplifiers operating in the 20GHz to 100GHz range, and incorporating low loss PIN switch functionality enables our customers to field unique single chip 5G solutions without sacrificing performance.”
WIN Semiconductors Corp at European Microwave 2017
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About WIN Semiconductors Corp.
For more than 17 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has more than 2200 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.
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