WIN Semiconductors Corp.,founded in October 1999, was the first pure-play 6-inch GaAs foundry in the world, has established an advanced GaAs wafer fab in recognition of the growing demand for low cost manufacturing of high speed and high quality GaAs MMIC?s (monolithic microwave ICs) and RFIC's (radio frequency ICs).
| Sep. 2004 |
Pilot run of 0.5 um 35V pHEMT for CATV |
| Feb. 2004 |
Baseline release of 2um High Ruggedness HBT |
| Jan. 2004 |
Passed process-oriented ISO 9001/Y2000 Version audit |
| Dec. 2003 |
Shipped more than 1.5 million WLAN PAs in a single month |
| Dec. 2003 |
Passed ISO 9001/2000 audit |
| Feb. 2003 |
First 0.15um mHEMT wafer for customer |
| Jan. 2003 |
Foundry production of customer specific 3um HBT started. |
| Nov. 2002 |
ISO14001 and OHSAS 18001 Certified |
| Nov. 2002 |
Pilot run release 50-um thick 0.15 um power pHEMT announced |
| Nov. 2002 |
Production release of 1-um HBT announced |
| Oct. 2002 |
Foundry production of 0.5-um power pHEMT started |
| Jun. 2002 |
First 0.5um switch pHEMT wafer for customer |
| Jun. 2002 |
Demonstrated world’s first 25-um thick, 6-inch pHEMT wafer |
| Jun. 2002 |
Production release of 2um HBT |
| May. 2002 |
Signed Strategic Alliance and Wafer Supply Agreements with Raytheon RF Components |
| May. 2002 |
World’s first 0.15um mHEMT wafer on 6”GaAs |
| Nov. 2001 |
Began foundry production for 0.15μm pHEMT |
| Sep. 2001 |
Awarded QS-9000 and ISO 9001 quality management system certification |
| Jun. 2001 |
Presents, 6-inch, GaAs 1μm HBT MMIC wafer |
| May 2001 |
Granted by Economy Ministry NT$40M for R&D Project |
| May 2001 |
Produced the worlds’ 1st, 6-inch, 50μm thick pHEMT MMIC wafer |
| Apr. 2001 |
Fab #1 begins production-level Foundry OperationspHEMT Preliminary Design Kit Available |
| Mar. 2001 |
Presents the world's 1st,6-inch,0.15μm GaAs pHEMT MMIC wafer |
| Jan. 2001 |
WIN Semiconductors initiates Pre Initial Public Offering (pre-IPO) |
| Nov. 2000 |
Completes production of Asia's 1st,6-inch,GaAs HBT MMIC waferCompletes production of Asia's 1st,6-inch,GaAs pHEMT wafer |
| Sep. 2000 |
Process equipment installation completeProcess qualification initiatedHBT Preliminary Design Kit Available |
| Jul. 2000 |
Facility construction complete |
| Dec.1999 |
Ground Breaking Ceremony for Corporate Offices & Fab #1 |
| Oct.1999 |
WIN Semiconductors Incorporates in Taiwan |
