HEMT Technologies

WIN provides foundry services in High Electron Mobility Transistor (HEMT) technology utilizing InGaAs layer as channel material. Advanced 6-inch process and epitaxy design provides excellent low noise and power performance with good temperature stability/reliability. WIN provides 4 groups of process technologies with very high yield for production now.

WIN’s InGaAs HEMT Process Technologies
 
0.15μm LN
(PL15-10)

0.15μm PWR
(PP15-10:2 mil
PP15-20:4 mil)

0.5μm switch
(PS50-00)
0.5μm PWR
(PP50-10)
0.5μm ED
Mode(PP50-00)
0.5μm ED Mode PD50-01
Dmode.....Emode
Targeted Applications
10 and 40Gb/s
lightwave circuits
VSAT﹐satellite﹐automotive radar
Cellular﹐PCS﹐802.11×
base station driver
Cellular﹐PCS﹐802.11×
Cellular﹐PCS﹐802.11
fI (GHz)
95
85
32
32
32
32
35
GM_Peak(mS/mm)
550
495
320
310
320
330
500
Idmax (mA/mm)
500
650
400
480
400
375
320
IDSS (mA/mm)
260
500
270
350
270
235
1.E-04
VDG(V)
9
10
15
20
15
16
15
Vto(V)
-0.7
-1.2
-1.1
-1.4
-1.1
-1
0.25
TFR(ohm/sq)
50
50
50
50
50
50
Capacitor(pf/mm2)
400
400
300
400
300
600(MIM)
900(Stack Cap)
Interconnect Crossover
Airbridge
Airbridge
SiN
Airbridge
SiN
Polyimide
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0.15 μm Low Noise pHEMT(PL15-10)
  WIN’s 0.15μm low noise pHEMT technology is ideal for 10 and 40 Gb/s broadband communications and very low noise, high gain LNA. The key factors of this technology includes:
95 GHz ft process
0.15 um e-beam lithography defined T-gate
Selective gate recess for uniformity
Air-bridge or slot via for connections
Two based Au interconnect metal layers)
Final wafer thickness 4mil
  Production ready
 
 
 
Noise Figure2-26GHz
 

40Gb/s TIA eye diagram
 
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0.15 μm Power pHEMT(PP15-10, -20)
  WIN has developed 2 versions of 0.15 μm power pHEMT process (2 mil/4 mil) for high volume production. The technologies are ideal for applications such as LMDS, VSAT, base station and automotive radar.

High Yield
RF Life test

29 GHz Loadpull
 

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0.5 μm pHEMT Switch(PS50-00)
  WIN’s 0.5 μm pHEMT switch process provides low insertion loss, high isolation and low harmonic distortion. The technology is well suited for both cellular handsets and WLAN applications.

High Yield
TX Input pover sweep at 900MHz and control voltage=-2.7/0 v
 
 


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0.5 μm Power pHEMT(PP50-10)
  WIN has developed 0.5 μm power pHEMT process for high volume production. The technologies are ideal for applications such as VSAT, base station and CATV.
 
2 GHz Loadpull
10 GHz Loadpull