HBT Technologies

WIN provides foundry services in Heterojunction Bipolar Transistor (HBT) technology utilizing InGaP as the emitter material. InGaP HBT provides excellent power performance, linearity and temperature stability/reliability. WIN provides 4 kinds of process technologies with very high yield for production now.  

WIN¡¦s InGaP HBT Process Technologies
 
1£gm HBT)
(H01U-00)
2£gm HBT
(15V)
(H02U-00)
1£gm HBT
(H02U-01)
2£gm HBT
(High Linearity)
(H02U-31)
2£gm HBT
(High Ruggedness)
(H02U-41)
Targeted
Applications
OC192 PMD and
PHY Layer circuits
Cellular,PCS,
802.11xPA
802.11xPA
CDMA PA with
higher Linearity
GSM PA With
stringent ruggedness
Requirement
fT (GHz)
65
35
35
31
31
fmax(GHz)
80
100
120
110
110
IDC current gain
140
75
75
70
75
BVCEO (V)
9
15
14.5
16.5
17
BVEBO (V)
9
9
10
9.5
7
BVCBO (V)
18
22
23
27
30
TFR(ohm/sq)
50
50
50
50
50
Capacitor(pf/mm2)

600(MIM)

300(MIM)
450(Stack Cap)
600(MIM)
900(Stack Cap)

600(MIM)
900(Stack Cap)

600(MIM)
900(Stack Cap)
Interconnect Crossover
Polyimide
SiN
Polyimide
Polyimide
Polyimide
 
Electrical Yield vs. Number of Fingers
WIN's HBT Die Yield
 
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1 £gm HBT (H01U-00)
  WIN¡¦s 1 £gm HBT technology utilizes 1mm emitter finger as unit cell. The technology is ideal for broadband lightwave communication systems (SONET/SDH). The key factors of this technology includes:
 65 GHz ft process
 High integration level
 For PA, 10 Gb/s lightwave communications
Higher frequency PAs
TIA, LA/AGC
 Production ready

 


F v.s J Characteristics
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2 £gm HBT (H02U-00, -10, -20)
WIN has developed 3 versions of 2 £gm HBT process for high volume production. The technologies are ideal for applications such as digital cellular handsets (GSM, CDMA, TDMA, and 3G W-CDMA systems) and WLAN.
 

HBT X' sectional View
DC Life test (H02U-00)

GSM1900 Loadpull (H02U-00)

GSM1900 Loadpull (H02U-20)
GSM1900 Ruggedness (H02U-20)