Milestone

Sep. 2004
 Pilot run of 0.5 um 35V pHEMT for CATV
Feb. 2004
 Baseline release of 2um High Ruggedness HBT
Jan. 2004
 Passed process-oriented ISO 9001/Y2000 Version audit
Dec. 2003
 Shipped more than 1.5 million WLAN PAs in a single month
Dec. 2003
 Passed ISO 9001/2000 audit
Feb. 2003
 First 0.15um mHEMT wafer for customer
Jan. 2003
 Foundry production of customer specific 3um HBT started.
Nov. 2002
 ISO14001 and OHSAS 18001 Certified
Nov. 2002
 Pilot run release 50-um thick 0.15 um power pHEMT announced
Nov. 2002
 Production release of 1-um HBT announced
Oct. 2002
 Foundry production of 0.5-um power pHEMT started
Jun. 2002
 First 0.5um switch pHEMT wafer for customer
Jun. 2002
 Demonstrated world¡¦s first 25-um thick, 6-inch pHEMT wafer
Jun. 2002
 Production release of 2um HBT
May. 2002
 Signed Strategic Alliance and Wafer Supply Agreements with Raytheon RF Components
May. 2002
 World¡¦s first 0.15um mHEMT wafer on 6¡¨GaAs
Nov. 2001
 Began foundry production for 0.15£gm pHEMT
Sep. 2001
 Awarded QS-9000 and ISO 9001 quality management system certification
Jun. 2001
 Presents, 6-inch, GaAs 1£gm HBT MMIC wafer
May 2001
 Granted by Economy Ministry NT$40M for R&D Project
May 2001
 Produced the worlds¡¦ 1st, 6-inch, 50£gm thick pHEMT MMIC wafer
Apr. 2001
 Fab #1 begins production-level Foundry OperationspHEMT Preliminary Design Kit Available
Mar. 2001
 Presents the world's 1st,6-inch,0.15£gm GaAs pHEMT MMIC wafer
Jan. 2001
 WIN Semiconductors initiates Pre Initial Public Offering (pre-IPO)
Nov. 2000
 Completes production of Asia's 1st,6-inch,GaAs HBT MMIC waferCompletes production of Asia's 1st,6-inch,GaAs pHEMT wafer
Sep. 2000
 Process equipment installation completeProcess qualification initiatedHBT Preliminary Design Kit Available
Jul. 2000
 Facility construction complete
Dec.1999
 Ground Breaking Ceremony for Corporate Offices & Fab #1
Oct.1999
 WIN Semiconductors Incorporates in Taiwan