Enabling 5G Connectivity
GaAs & GaN Technologies for Mobile Devices and 5G Infrastructure
With the evolution of 5G wireless devices and infrastructure, GaAs, HBT, pHEMT and GaN technologies will play a key role in exceeding the diverse performance requirements of this new wireless network. WIN continues to support the road to 5G with a broad portfolio of highly integrated compound semiconductor technologies optimized for key functions, including:
- 5G sub-6GHz (<6GHz) spectrum bands for ubiquitous network coverage
- mmWave (~30GHz) for fixed wireless access and mobile broadband
WIN's technology portfolio covers HBT, GaN HEMT, pHEMT and highly integrated platforms to keep our customers ahead of the competition. Our advanced processes deliver the optimal combination of performance, integration and efficiency for next-generation 5G front-ends, low latency connections and massive MIMO access points. WIN’s technology is the backbone for development and implementation of:
- 5G mmWave Backhaul/Fronthaul
- 5G mmWave Front End Modules for Active Antenna Arrays and User Equipment
- 5G Macrocell and MIMO Base Stations
WIN mmWave Front-End Solutions
Advanced GaAs Integration for Single Chip mmWave Front-Ends
0.45µm GaN Power Process for 5G Applications
WIN Semiconductors Enables Single Chip GaAs Solutions For 5G RF Front End Modules